The primary topic of this thesis is the analysis of the Schottky barrier height of samples of Au: GaAs and GaN nanowires. This was accomplished through the use of a ballistic electron emission microscope. The ballistic electron emission microscope was adapted from a scanning tunneling microscope through the addition of extra base and BEEM current terminals in order that BEEM spectra may be collected. During this experiment the Schottky barrier height of Au: GaAs was characterized and compared to previous data taken at the Vienna University of Technology (TU-Wien). This data compared favorably to the data at TU-Wien thus showing that the adapted BEEM system was functioning properly. Some preliminary data was also taken for GaN nanowire samples.